Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2024

Trimethylboron as a precursor for boron phosphide plasma deposition at low temperature

Demid Kirilenko

Résumé

Boron phosphide (BP) thin films are potential selective contact layers for photovoltaic (PV) devices. However, lower deposition temperatures are preferred in the fabrication of many PV devices, such as solar cells, to reduce their cost. Here, boron phosphide layers were grown on silicon (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) and modified atomic layer deposition (ALD) methods with trimethylboron (B(CH3)3, TMB) and phosphine (PH3) precursors. The effect of plasma power and Ar addition on structural properties and chemical composition is investigated, while material properties are analyzed by transmission electron microscopy (TEM). Chemical characterization by the electron diffraction x-ray spectroscopy (EDX) method showed high carbon content in the BP layer. Electron Energy Loss Spectroscopy (EELS) demonstrated almost stoichiometric B and P (1:1) content. Raman spectroscopy of annealed samples showed an increase in carbon-related peaks, therefore indicating that annealing does not lead to the crystallization of boron phosphide. Thus, using TMB as a precursor of boron leads to carbon contamination in both PECVD and ALD modes. Optical emission spectroscopy (OES) showed that the low-temperature growth of BP without plasma (Ar or phosphine) assistance using TMB is impossible. We conclude that TMB is not suitable as a precursor of B for BP growth.
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hal-04894267 , version 1 (17-01-2025)

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Alina Maksimova, Alexander Uvarov, Demid Kirilenko, Artem Baranov, Ekaterina Vyacheslavova, et al.. Trimethylboron as a precursor for boron phosphide plasma deposition at low temperature. Journal of Vacuum Science & Technology A, 2024, 43, pp.013402. ⟨10.1116/6.0004065⟩. ⟨hal-04894267⟩
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